Schottky Barrier Rectifier 1A 50V DO-41

The MBR150/160 series employs the Schottky Barrier principle in alarge area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

•Low Reverse Current
•Low Stored Charge, Majority Carrier  Conduction
•Low Power Loss/High Efficiency
•Highly Stable Oxide Passivated Junction
•These are Pb-Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded
•Weight: 0.4 Gram (Approximately)
•Finish: All External Surfaces Corrosion  Resistant and Terminal
 Leads are Readily Solderable
•Lead Temperature for Soldering.